ES2JB
Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 5uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: SMBF
No preview available
Download the PDF to view the complete datasheet
Similar Components
AT24C08D
IC EEPROM 8KBIT 1MHZ 8VFBGA
SS-5H-2A-BK
Fuse Subminiature Slow Blow Acting 2A 250V Radial 8.5 X 4.3 X 7.85mm Plastic Bulk CQC/KC/PSE/TUV/VDE/cULus
AO4606
Transistor
TR/MDA-V-20-R
This 20A axial fuse is rated for 125V DC and 250V AC. It features a low DC cold resistance of 4mR and is packaged in quantities of 500 on tape and reel. The fuse is RoHS compliant and meets the approval standards of UL, CSA, and CE.
74HC125D
DRIVER
NE555DR
Single channel timer IC, operating from 4.5V to 16V, with a frequency range up to 100kHz. Features include 200mA output current capability (both high and low level) and a maximum operating temperature of 70°C. This surface mount component is housed in an 8-pin SOIC package, measuring 4.9mm in length, 3.91mm in width, and 1.58mm in height. It is RoHS compliant and supplied on tape and reel.
About ES2JB
The Galaxy Microelectronics ES2JB Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 5uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: SMBF. Key parameters include Diode Element Material: SILICON, Diode Type: RECTIFIER DIODE, Max Operating Temperature: 150, Military Spec: False, and Min Operating Temperature: -55. ES2JB is manufactured by Galaxy Microelectronics as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Galaxy Microelectronics
- Category
- Semiconductors
Ask AI Assistant
Ask questions about ES2JB specifications
Click to ask a quick question:
Parameters
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Max Operating Temperature | 150 |
| Military Spec | False |
| Min Operating Temperature | -55 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| REACH | unknown |
| Rep Pk Reverse Voltage-Max | 600 |
| RoHS | Yes |
| Terminal Position | DUAL |