Central Semiconductor
1N5399
Diode 1KV 1.5A 2-Pin DO-15
2SC1815
Small Signal Bipolar Transistor,
CS223-4MTR
CS223-4M Series 600 V 4 A Epoxy Molded Silicon Controlled Rectifier - SOT-223
MJ2955
Power Bipolar Transistor, 15A I(C), 60V V(BR)CEO, 1-Element, PNP, Silicon, TO-3, Metal, 2 Pin, TO-3, 2 PIN
PN2222A
The PN2222A is a NPN bipolar junction transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 800mA. It is packaged in a TO-92, 3 PIN package and is suitable for operation over a temperature range of -65°C to 150°C. The transistor has a maximum power dissipation of 625mW and is not RoHS compliant.
TIP31
The TIP31 is a TO-220 packaged NPN bipolar junction transistor with a collector-emitter voltage maximum of 40V and a continuous collector current of 3A. It has a maximum power dissipation of 40W and a gain bandwidth product of 3MHz. The transistor is not RoHS compliant and is available in bulk packaging with 400 units per package.
TIP32
The TIP32 is a PNP bipolar junction transistor with a collector-emitter voltage maximum of -40V and a collector current maximum of 3A. It features a TO-220 package and is rated for a maximum power dissipation of 40W. The transistor has a gain bandwidth product of 3MHz and a minimum current gain of 25. It operates over a temperature range of -65°C to 150°C.