The NXP PMBS3906215 Uncategorized datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: PNP BJT Transistor, 40V, 100mA, 250mW, SOT-23. Key parameters include Collector Base Voltage (VCBO): 40V, Collector Emitter Breakdown Voltage: 40V, Collector Emitter Saturation Voltage: 400mV, Collector-emitter Voltage-Max: 400mV, and Collector Emitter Voltage (VCEO): -40V. PMBS3906215 is manufactured by NXP as part of their Uncategorized product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer: NXP
Category: Uncategorized

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Parameters

Collector Base Voltage (VCBO)	40V
Collector Emitter Breakdown Voltage	40V
Collector Emitter Saturation Voltage	400mV
Collector-emitter Voltage-Max	400mV
Collector Emitter Voltage (VCEO)	-40V
Emitter Base Voltage (VEBO)	5V
Height	1mm
hFE Min	100
Lead Free	Lead Free
Length	3mm
Max Breakdown Voltage	40V
Max Collector Current	100mA
Max Operating Temperature	150°C
Max Power Dissipation	250mW
Min Operating Temperature	-65°C
Mount	Surface Mount
Package/Case	TO-236AB
Package Quantity	1
Packaging	Cut Tape
Polarity	PNP
Radiation Hardening	No
Reach SVHC Compliant	No
RoHS	Compliant
Termination	SMD/SMT
Transition Frequency	150MHz
Width	1.4mm