MBR0530T1G
Surface mount Schottky power rectifier with a maximum repetitive peak reverse voltage of 30 V and a continuous forward current of 500 mA. Features a 2-terminal, dual terminal configuration with a silicon diode element. Operates within a temperature range of -65°C to 125°C.
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About MBR0530T1G
The Onsemi MBR0530T1G Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Surface mount Schottky power rectifier with a maximum repetitive peak reverse voltage of 30 V and a continuous forward current of 500 mA. Features a 2-terminal, dual terminal configuration with a silicon diode element. Operates within a temperature range of -65°C to 125°C.. Key parameters include Diode Element Material: SILICON, Diode Type: RECTIFIER DIODE, Eccn Code: EAR99, HTS Code: 8541.10.00.70, and Lead Free: Yes. MBR0530T1G is manufactured by Onsemi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Onsemi
- Category
- Semiconductors
- File Size
- 171 KB
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Parameters
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| Lead Free | Yes |
| Max Operating Temperature | 125 |
| Military Spec | False |
| Min Operating Temperature | -65 |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Pin Count | 2 |
| REACH | Compliant |
| Rep Pk Reverse Voltage-Max | 30 |
| Terminal Position | DUAL |