IRF740PBF
The IRF740PbF is a single-channel, N-channel enhancement mode power MOSFET with a maximum drain source voltage of 400V and a maximum continuous drain current of 10A. It has a maximum gate source voltage of ±20V and a maximum gate threshold voltage of 4V. The device has a maximum drain source resistance of 550 ohms at 10V and a typical gate charge of 63nC at 10V. The IRF740PbF is packaged in a TO-220AB package and has a typical output capacitance of 330pF. It operates over a temperature range of -55°C to 150°C.
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About IRF740PBF
The Vishay IRF740PBF Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The IRF740PbF is a single-channel, N-channel enhancement mode power MOSFET with a maximum drain source voltage of 400V and a maximum continuous drain current of 10A. It has a maximum gate source voltage of ±20V and a maximum gate threshold voltage of 4V. The device has a maximum drain source resistance of 550 ohms at 10V and a typical gate charge of 63nC at 10V. The IRF740PbF is packaged in a TO-220AB package and has a typical output capacitance of 330pF. It operates over a temperature range of -55°C to 150°C.. Key parameters include Category: Power MOSFET, Channel Mode: Enhancement, Channel Type: N, Configuration: Single, and Maximum Continuous Drain Current: 10A. IRF740PBF is manufactured by Vishay as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Vishay
- Category
- Semiconductors
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Parameters
| Category | Power MOSFET |
| Channel Mode | Enhancement |
| Channel Type | N |
| Configuration | Single |
| Maximum Continuous Drain Current | 10A |
| Maximum Drain Source Resistance | 550@10VmOhm |
| Maximum Drain Source Voltage | 400V |
| Maximum Gate Source Voltage | ±20V |
| Maximum Gate Threshold Voltage | 4V |
| Maximum Power Dissipation | 125000mW |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Number of Elements per Chip | 1 |
| Package/Case | TO-220AB |
| Package Family Name | TO-220 |
| Pin Count | 3 |
| RoHS | Yes |
| RoHS Version | 2011/65/EU, 2015/863 |
| Typical Gate Charge @ 10V | 63(Max)nC |
| Typical Gate Charge @ Vgs | 63(Max)@10VnC |
| Typical Input Capacitance @ Vds | 1400@25VpF |
| Typical Output Capacitance | 330pF |