Diodes
A1015
Transistor
AP1117E33G-13-82
Fixed Positive Single Output LDO Regulators
AP63200WU-7
Switching Regulator,
BAS40
DIODES INC. BAS40 Small Signal Schottky Diode, Single, 40 V, 200 mA, 1 V, 600 mA, 150 C
BZT52C10
Surface-mount Zener diode provides a 10 V nominal Zener voltage with a 9.4 V to 10.6 V range at 5 mA test current. The device dissipates up to 500 mW at lead temperature and uses a molded plastic SOD123 package with matte-tin finished terminals. Reverse current is rated at 0.2 µA at 7 V, with 20 Ω maximum Zener impedance at the test current. The diode operates over a -65 °C to +150 °C junction and storage temperature range and is lead-free, RoHS compliant, halogen-free, antimony-free, and qualified to AEC-Q101 standards.
BZT52C15S
DIODES INC. - BZT52C15S - ZENER-DIODE, 15V, 0.2W, SOD-323
BZT52C2V0
Zener Diode, 2V V(Z), 4.5%, 0.5W, Silicon, Unidirectional, PLASTIC PACKAGE-2
BZT52C2V7S
Zener Diode, 2.7V V(Z), 7.41%, 0.2W, Silicon, Unidirectional,
BZT52C36S
The Diodes BZT52C36S is a Zener diode with a Zener voltage of 36V and a Zener current of 2mA. It has an impedance of 90R and a maximum power dissipation of 200mW. The diode is available in an SMD/SMT termination and has a maximum operating temperature of 150°C and a minimum operating temperature of -65°C.
BZX84C18
DIODES INC. - BZX84C18 - Zener-Diode, 18 V, 350 mW, SOT-23, 6 %, 3 Pin(s), 150 °C
BZX84C33
DIODES INC. BZX84C33 Zener Single Diode, 33 V, 350 mW, SOT-23, 6 %, 3 Pins, 150 C
BZX84C6V8
The BZX84C6V8 is a Zener diode with a maximum operating temperature range of -65°C to 150°C. It has a maximum power dissipation of 350mW and a tolerance of 5%. The device is packaged in a SOT-23 package and is available on cut tape. The BZX84C6V8 is not RoHS compliant and is not Reach SVHC compliant.
DMN2041L-7
N-Channel Silicon Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for surface mounting in a SOT-23-3 plastic package. Features a continuous drain current of 6.4A, drain-source voltage up to 20V, and a maximum drain-source on-resistance of 28mR. Operates with a gate-to-source voltage of 12V and exhibits turn-on delay time of 4.69ns and fall time of 6.43ns. Maximum power dissipation is 780mW, with operating temperatures ranging from -55°C to 150°C. This RoHS compliant component is supplied on tape and reel.
DMN2075U-7
N-Channel Silicon Metal-Oxide Semiconductor FET, 1-Element, Surface Mount Transistor. Features 20V Drain-Source Voltage (Vdss) and 4.2A Continuous Drain Current (ID). Offers low Drain-Source On Resistance (Rds On) up to 38mR. Operates within a temperature range of -55°C to 150°C with a 1V Threshold Voltage. Packaged in a SOT-23-3 plastic package, tape and reel.
DMN3042L-7
3-terminal, single-element small signal field-effect transistor. Features a dual terminal position for versatile circuit integration. This semiconductor device offers efficient switching and amplification capabilities within discrete electronic designs.
DMN6040SK3-13
N-Channel Power MOSFET, 60V Drain-Source Voltage, 20A Continuous Drain Current, and 40mΩ Max Drain-Source On-Resistance. This single-element silicon FET features a TO-252-3 surface-mount package, 1.287nF input capacitance, and 42W max power dissipation. Optimized for performance with a 6.6ns turn-on delay and 20.1ns turn-off delay, it operates from -55°C to 150°C.
DMN65D8L-7
N-channel enhancement mode MOSFET, 60V drain-source voltage, 0.31A continuous drain current. Features 3000mOhm maximum drain-source resistance at 10V and a 2V maximum gate threshold voltage. Packaged in a 3-pin SOT-23 (TO-236AA) lead-frame SMT with gull-wing leads, suitable for surface mounting. Operating temperature range from -55°C to 150°C.
DMP2035U-7
P-channel JFET, surface mount, in a SOT-23-3 package. Features 20V drain-source voltage (Vdss) and 3.6A continuous drain current (ID). Offers a low drain-source on-resistance (Rds On) of 35mR. Operates from -55°C to 150°C with 810mW power dissipation. Includes 1.61nF input capacitance and fast switching times with 16.8ns turn-on and 42.4ns fall times.
DMP3056L-7
3-terminal, single-element power MOSFET designed for efficient switching applications. Features a minimum operating temperature of -55°C, enabling reliable performance across a wide temperature range. Dual terminal configuration facilitates versatile circuit integration.
DMP3098L-7
P-channel MOSFET transistor, 30V drain-source voltage, 3.8A continuous drain current. Features low 70mΩ maximum drain-source on-resistance and 1.08W power dissipation. Operates across a -55°C to 150°C temperature range. Packaged in a 3-pin SOT with tape and reel delivery.