The EPC2052 is a 100 V, 13.5 mΩ enhancement-mode gallium nitride (eGaN) power transistor designed for high-efficiency power conversion. It features a compact 1.5 mm x 1.5 mm die footprint and zero reverse recovery (QRR) charge. This FET is optimized for high-frequency switching applications including 48 V servers, LiDAR, motor drives, Class-D audio, and LED lighting. It is supplied in a passivated die form with solder bumps, offering high power density and superior thermal performance.