Semiconductors

EPC2053

N-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for high-power applications. Features a low on-resistance of 0.0038 ohms and a drain-source voltage rating of 100V. Supports a continuous drain current of 48A. Operates across a temperature range of -40°C to 150°C. This single-element device is presented in a DIE-28 package.

Efficient Power Conversion

ES1B

Surface mount switching diode with 100V peak reverse repetitive voltage and 1A maximum continuous forward current. Features a 2-pin SMA (DO-214-AC) plastic package with J-lead configuration, measuring 4.6mm max length, 2.9mm max width, and 2.24mm max height. Offers a 30A peak non-repetitive surge current and 35ns peak reverse recovery time. Operates across a temperature range of -65°C to 150°C.

Won-Top Electronics

26 4

ES1D

General purpose rectifier diode with a 200V repetitive reverse voltage and 1A average rectified current. Features a 30A peak non-repetitive surge current and 15ns reverse recovery time. This surface mount diode is housed in a DO-214AC package, measuring 4.75mm in length, 2.95mm in width, and 2.2mm in height. Operating temperature range is -50°C to 150°C, with a power dissipation of 1.47W. RoHS compliant and lead-free.

Onsemi

30 4

ES1DW

Rectifier Diode, 1 Element, 1A, 200V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA(W), 2 PIN

Panjit

ES1G

General purpose rectifier diode, 400V peak reverse voltage, 1A continuous forward current. Features 30A peak surge current capability and a 35ns reverse recovery time. Surface mountable in a 2-pin SMA (DO-214-AC) plastic package with J-lead configuration. Operating temperature range from -55°C to 150°C.

Won-Top Electronics

23 4

ES1J

Ultra-fast recovery rectifier with 600V reverse voltage and 1A average rectified current. Features a 35ns reverse recovery time and 30A maximum surge current. Packaged in a DO-214AC surface mount case, this component offers a low 10pF capacitance and operates from -55°C to 150°C. Supplied on a 7500-piece tape and reel, it is RoHS compliant.

Onsemi

29 7

ES1JW

Rectifier Diode, 1 Element, 1A, 600V V(RRM), Silicon, DO-214AC, ROHS COMPLIANT, PLASTIC, SMA(W), 2 PIN

Panjit

ES1M

Rectifier Diode Switching 1KV 1A 100ns 2-Pin HSMA T/R

MCC

ES2A

Switching diode with 50V peak reverse repetitive voltage and 2A maximum continuous forward current. Features a 2-pin SMB (DO-214AA) surface mount package with J-lead configuration, measuring 4.75mm(L) x 3.73mm(W) x 2.41mm(H). Offers a peak non-repetitive surge current of 50A and a peak forward voltage of 0.95V. Operating temperature range spans from -55°C to 150°C.

Good-Ark Semiconductor

21 4

ES2D

Switching rectifier diode with a 200V peak reverse repetitive voltage and 2A maximum continuous forward current. Features a 35ns peak reverse recovery time and 50A peak non-repetitive surge current. Housed in a 2-pin SMB (DO-214AA) surface mount plastic package with J-lead configuration. Operates from -55°C to 150°C.

Good-Ark Semiconductor

24 4

ES2DB

Rectifier Diode,

Galaxy Semi-Conductor

ES2G

Switching rectifier diode with 400V peak reverse repetitive voltage and 2A maximum continuous forward current. Features a 35ns peak reverse recovery time and a 1.3V peak forward voltage. Packaged in a 2-pin SMB (DO-214AA) lead-frame SMT plastic package with J-lead configuration, suitable for surface mounting. Operating junction temperature range is -55°C to 150°C.

Good-Ark Semiconductor

23 4

ES2J

Switching rectifier diode with 600V peak reverse repetitive voltage and 2A maximum continuous forward current. Features a fast 35ns peak reverse recovery time and a 1.7V peak forward voltage. Housed in a 2-pin SMB (DO-214AA) surface-mount plastic package with J-lead configuration, measuring 4.75mm(L) x 3.73mm(W) x 2.41mm(H). Operates across a wide temperature range of -55°C to 150°C.

Good-Ark Semiconductor

24 4

ES2JB

Super Fast Recovery Rectifier, VRRM MAX (V): 600V; IAV MAX (A): 2A; VFM MAX (V): 1.7V; @ IF (A): 2A; IFSM MAX (A): 50A; IR MAX (UA): 5uA; @VR (V): 600V; TRR MAX (NS): 35ns; Package: SMBF

Galaxy Microelectronics