Semiconductors
DTA143EKA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon,
DTC114EET1G
NPN digital bipolar transistor in SOT-416 package, featuring a 50V collector-emitter breakdown voltage and 100mA continuous collector current. Offers a maximum power dissipation of 200mW and a low collector-emitter saturation voltage of 250mV. Operates across a temperature range of -55°C to 150°C, with a minimum hFE of 35. This RoHS and Halogen Free component is supplied on tape and reel.
DTC114EKA
Small Signal Bipolar Transistor, 0.05A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
DTC124EKA
Small Signal Bipolar Transistor, 0.03A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
DTC143EKA
Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, NPN, Silicon,
DTX1800
LAN TESTER, LCD, CAT6 AUTOTEST 9SEC; Meter Display Type:LCD; Network Speeds:10Mbps, 100Mbps, 1Gbps; Network Functionality:-; Product Range:-; For Use With:Shielded and Unshielded Twisted Pair LAN Cabling; Tone Generator:Yes ;RoHS Compliant: NA
ED250
Fuse HRC 250A 415V Bolt Tap 31 X 112mm
EMG851110S
The EMG851110S is a cellular gateway with support for 4G-LTE networks and a wide range of network protocols. It operates within a temperature range of 0 to 50°C and is designed for rack or wall mounting. The device has a depth of 167.68mm, a height of 43.21mm, and a length of 212.6mm.
EMG851210SP
The EMG851210SP is a cellular gateway from Lantronix, designed for rack or wall mounting. It supports 4G-LTE cellular networks and implements a wide range of network protocols, including TCP/IP, SSH, TLS, and others. The device operates within a temperature range of 0 to 50°C. Its dimensions are 167.68mm in depth, 43.21mm in height, and 212.6mm in length.
EN25Q64
Serial Flash memory provides 64 Mbit of storage organized as 8192 Kbytes with 256-byte programmable pages. The device supports standard SPI plus Dual and Quad SPI operation with SPI modes 0 and 3. Read operation supports up to 104 MHz for single-bit SPI and 50 MHz for dual- or quad-bit operation. The memory uses 4 Kbyte uniform sectors and 64 Kbyte blocks that can be erased individually. Industrial temperature operation spans -40 °C to 85 °C, and package options include SOP and VDFN formats.
ENC28J60-I/SO
10Mbps Ethernet controller IC, featuring a single channel for local area network connectivity. This surface-mount device utilizes an SPI interface and operates at a 20MHz frequency. Packaged in a 28-pin SOIC (PDSO28) with dimensions of 17.9mm length, 7.5mm width, and 2.05mm height. It supports a supply voltage range of 3.1V to 3.6V, with a nominal operating voltage of 3.3V and a maximum supply current of 180mA. Operating temperature range is -40°C to 85°C.
EP4CE10E22C8N
Field Programmable Gate Array (FPGA) with 10320 logic elements/cells and 645 logic array blocks (LABs). Features 414Kb memory size, 91 I/Os, and operates at a maximum frequency of 200MHz. This surface mount device utilizes 60nm technology and has an operating supply voltage of 1.2V, with a range of 1.15V to 1.25V. Packaged in a 144-pin EQFP (TQFP) measuring 20mm x 20mm x 1.6mm, it supports a temperature range of 0°C to 85°C.
EP4CE15E22C8N
Field Programmable Gate Array (FPGA) with 15,408 logic elements/cells and 963 LABs. Features 504Kb memory, 516,096 bits RAM, and 81 I/Os. Operates at 1.2V with a maximum frequency of 200MHz. Packaged in a 144-pin EQFP, surface mountable, with dimensions of 20mm x 20mm x 1.6mm. Offers an operating temperature range of 0°C to 85°C.
EP4CE6E22C8N
Field Programmable Gate Array (FPGA) with 6272 logic elements/cells and 392 logic blocks (LABs). Features 270Kb memory size and 276480 bits of RAM. Operates at a maximum frequency of 200MHz with a supply voltage range of 1.15V to 1.25V. Packaged in a 144-pin PQFP (EQFP-144) for surface mounting, with dimensions of 20mm x 20mm x 1.6mm. RoHS compliant and suitable for operation between 0°C and 85°C.
EPC2010C
N-channel silicon MOSFET featuring 200V drain-source voltage and 22A continuous drain current. Offers a low on-resistance of 0.025 ohms, enabling efficient power switching. Designed with a 1-element configuration and 7 terminals, operating across a temperature range of -40°C to 150°C. This metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.
EPC2014C
N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-performance power applications. Features a continuous drain current (I(D)) of 10A and a drain-source voltage (V(DS)) of 40V, with a low on-resistance (R(DS(on))) of 0.016 ohms. This single-element device utilizes a 5-terminal configuration and is HALOGEN FREE and ROHS COMPLIANT.
EPC2020
N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a low on-resistance of 0.0022 ohms and a drain-source voltage rating of 60V. Supports a continuous drain current of 60A. This single-element device is presented as a DIE-30 package with 30 terminals.
EPC2021
N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for high-power applications. Features a low on-resistance of 0.0025 ohms and a drain-source voltage rating of 80V. Supports a continuous drain current of 60A. This single-element device is presented as a 30-terminal die.
EPC2034C
N-channel Gallium Nitride (GaN) power MOSFET featuring a low on-resistance of 0.008 ohms and a drain-source voltage rating of 200V. This single-element transistor is designed for high-power applications, capable of handling a continuous drain current of 48A. It operates within a temperature range of -40°C to 150°C and utilizes a 24-terminal die with upper terminal positioning.
EPC2052
The EPC2052 is a 100 V, 13.5 mΩ enhancement-mode gallium nitride (eGaN) power transistor designed for high-efficiency power conversion. It features a compact 1.5 mm x 1.5 mm die footprint and zero reverse recovery (QRR) charge. This FET is optimized for high-frequency switching applications including 48 V servers, LiDAR, motor drives, Class-D audio, and LED lighting. It is supplied in a passivated die form with solder bumps, offering high power density and superior thermal performance.