EN25Q64

Serial Flash memory provides 64 Mbit of storage organized as 8192 Kbytes with 256-byte programmable pages. The device supports standard SPI plus Dual and Quad SPI operation with SPI modes 0 and 3. Read operation supports up to 104 MHz for single-bit SPI and 50 MHz for dual- or quad-bit operation. The memory uses 4 Kbyte uniform sectors and 64 Kbyte blocks that can be erased individually. Industrial temperature operation spans -40 °C to 85 °C, and package options include SOP and VDFN formats.

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About EN25Q64

The Issi EN25Q64 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Serial Flash memory provides 64 Mbit of storage organized as 8192 Kbytes with 256-byte programmable pages. The device supports standard SPI plus Dual and Quad SPI operation with SPI modes 0 and 3. Read operation supports up to 104 MHz for single-bit SPI and 50 MHz for dual- or quad-bit operation. The memory uses 4 Kbyte uniform sectors and 64 Kbyte blocks that can be erased individually. Industrial temperature operation spans -40 °C to 85 °C, and package options include SOP and VDFN formats.. Key parameters include Block Size: 64Kbyte, Dual/Quad Clock Rate: 50MHz, Endurance: 100000 minimumcycles, Interface: SPI, Dual SPI, Quad SPI, and Memory Density: 64Mbit. EN25Q64 is manufactured by Issi as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Issi
Category
Semiconductors

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Parameters

Block Size64Kbyte
Dual/Quad Clock Rate50MHz
Endurance100000 minimumcycles
InterfaceSPI, Dual SPI, Quad SPI
Memory Density64Mbit
Memory Organization8192Kbyte
Number of Blocks128
Number of Sectors2048
Operating Temperature-40 to 85°C
Page Size256byte
Sector Size4Kbyte
Single-bit Clock Rate104MHz
SPI ModesMode 0 and Mode 3
Supply Voltage2.7 to 3.6V
Typical Active Current12mA
Typical Block Erase Time500ms
Typical Chip Erase Time30s
Typical Page Program Time1.3ms
Typical Power-down Current1µA
Typical Sector Erase Time90ms