Semiconductors
1N4004
General purpose rectifier diode featuring a 400V repetitive reverse voltage and 1A forward current. This single element diode is housed in a DO-41 package with tin, matte contact plating and supports through-hole mounting. It offers a maximum forward surge current of 30A and operates within a temperature range of -55°C to 175°C. The component has a capacitance of 15pF and a power dissipation of 3W, with a maximum reverse current of 5µA.
1N4004W
Rectifier Diode, 1 Element, 1A, 400V V(RRM), Silicon,
1N4007
The 1N4007 is a general purpose rectifier diode with a maximum operating temperature of 150°C and a minimum operating temperature of -65°C. It has a maximum repetitive reverse voltage of 1kV and a maximum reverse current of 5uA. The diode is packaged in a DO-41 package and is available in a lead-free version. It is RoHS compliant and has a peak non-repetitive surge current of 30A.
1N4007W
Rectifier Diode, 1 Element, 1A, 1000V V(RRM), Silicon,
1N4148
High-speed switching diode uses planar technology in a hermetically sealed axial glass SOD27 package. It supports up to 100 V repetitive peak reverse voltage and 200 mA continuous forward current. Reverse recovery time is rated up to 4 ns, with diode capacitance up to 4 pF and total power dissipation up to 500 mW at 25 °C.
1N4148W
Surface mount rectifier diode, single element, silicon construction. Features a maximum repetitive reverse voltage of 75V and a forward continuous current of 0.15A. Operates across a wide temperature range from -55°C to 150°C, with a peak non-repetitive surge current capability of 2A. Packaged in tape and reel, this RoHS compliant component weighs 30mg.
1N4148WS
Surface mount rectifier diode featuring a single silicon element. Delivers 150mA forward current with a 75V reverse voltage rating. Maximum repetitive reverse voltage is 100V, and maximum reverse current is 1A. Operates across a wide temperature range from -55°C to 150°C. RoHS compliant and housed in a plastic package with a height of 1.1mm.
1N4148WT
Small signal switching rectifier diode for general-purpose applications. Features a maximum repetitive reverse voltage of 75V and a maximum reverse voltage of 75V DC. Offers a fast reverse recovery time of 4ns, an average rectified current of 200mA, and a forward current of 300mA. Packaged in a 2-pin SOD-523 surface mount package, supplied on tape and reel. Operates across a temperature range of -55°C to 150°C.
1N4448
General purpose rectifier diode featuring 200mA average rectified current and 4A peak non-repetitive surge current. This through-hole component offers a fast 4ns reverse recovery time and a maximum repetitive reverse voltage of 100V. With a 500mW power dissipation and a compact DO-35 package, it operates across a wide temperature range from -65°C to 175°C.
1N4728
Zener Diode, 3.3V V(Z), 10%, 1W, Silicon, Unidirectional, DO-41, PLASTIC PACKAGE-2
1N4733
Zener Diode, 5.1V V(Z), 10%, 1W, Silicon, Unidirectional, DO-41,
1N4742
The 1N4742 is a unidirectional silicon zener diode with a maximum power dissipation of 1W. It is available in a DO-41 axial package. The diode operates over a temperature range of -65°C to 200°C. The 1N4742 is suitable for general-purpose applications.
1N5231
Zener Diode, 5.1V V(Z), 10%, 0.5W, Silicon, Unidirectional, DO-204AH, DO-35, 2 PIN
1N5349
The 1N5349 is a silicon zener diode with a maximum operating temperature of 200°C and a maximum power dissipation of 5W. It features an axial terminal position and unidirectional polarity. This device is suitable for applications requiring a reliable and efficient zener diode solution. The 1N5349 is manufactured by Motorola and is part of the zener diodes category.
1N5399
Diode 1KV 1.5A 2-Pin DO-15
1N5401
General purpose rectifier diode with a 3A average rectified current and 100V repetitive reverse voltage. Features a 3A forward current, 200A peak non-repetitive surge current, and 6.25W power dissipation. Housed in a DO-201AD through-hole package, this RoHS compliant component operates from -55°C to 150°C.
1N5404
General purpose rectifier diode featuring a 400V repetitive reverse voltage and 3A average rectified current. This single element diode is housed in a DO-201AD package with tin, matte contact plating and supports through-hole mounting. It offers a maximum forward surge current of 200A and operates within a temperature range of -55°C to 150°C. The component has a capacitance of 30pF and a power dissipation of 6.25W, with RoHS compliance.
1N5408
The NTE Electronics 1N5408 is a general purpose rectifier diode with a maximum operating temperature of 150°C and a maximum repetitive reverse voltage of 1kV. It features a current rating of 3A and a forward surge current of 200A. The diode is packaged in a DO-201AD case and is lead free. It is RoHS compliant and suitable for use in a variety of applications.
1N5817
1A axial power Schottky rectifier with a maximum repetitive reverse voltage of 20V. Features a 1A average rectified current, 25A peak non-repetitive surge current, and a maximum reverse leakage current of 500µA. Operating temperature range spans from -65°C to 150°C. Housed in a DO-41 package with through-hole mounting, this RoHS compliant component offers a capacitance of 110pF.
1N5818
Schottky rectifier diode with 1A average rectified current and 30V repetitive reverse voltage. Features a 25A peak non-repetitive surge current and 500µA maximum reverse leakage current. This through-hole component is housed in a DO-41 package with dimensions of 5.2mm length, 2.7mm width, and 2.7mm height. Operating temperature range is -65°C to 150°C, with a capacitance of 110pF. RoHS compliant and lead-free.