Semiconductors

2N3906G

PNP bipolar junction transistor (BJT) in a TO-92 package, suitable for general-purpose applications. Features a maximum collector-emitter voltage (VCEO) of 40V and a continuous collector current (IC) of 200mA. Offers a minimum DC current gain (hFE) of 60 and a transition frequency (fT) of 250MHz. With a maximum power dissipation of 625mW, this through-hole component operates across a wide temperature range from -55°C to 150°C. The TO-92 package has a body height of 5.33mm and is supplied in bulk packaging.

Onsemi
24 4

2N5401

MULTICOMP 2N5401 Bipolar (BJT) Single Transistor, PNP, 150 V, 0.625 W, 600 mA, 50

Multicomp
24 4

2N5551

MULTICOMP 2N5551 Bipolar (BJT) Single Transistor, NPN, 160 V, 300 MHz, 625 mW, 600 mA, 80

Multicomp
25 3

2N7000

N-channel MOSFET, TO-92 package, offering 60V drain-source breakdown voltage and 350mA continuous drain current. Features include 5.3 Ohm on-state resistance, 43pF input capacitance, and 5ns turn-on delay. Operates from -55°C to 150°C with 1W maximum power dissipation. Through-hole mount, RoHS compliant.

Stmicroelectronics
31 7

2N7002

N-Channel Enhancement Mode Field Effect Transistor, SOT-23 package, offering a 60V drain-source voltage and 115mA continuous drain current. Features a low 7.5 Ohm maximum drain-source on-resistance and a 2.1V threshold voltage. Operates across a wide temperature range from -55°C to 150°C with 200mW maximum power dissipation. This surface mount transistor is RoHS compliant and available on a 3000-piece tape and reel.

Onsemi
25 6

2N7002DW

Dual N-Channel MOSFET, 60V Vds, 115mA ID, 7.5 Ohm Rds(on). Surface mount SC package with 1.25mm width, 2mm length, and 1mm height. Features 50pF input capacitance, 5.85ns turn-on delay, and 12.5ns turn-off delay. Operating temperature range from -55°C to 150°C with 200mW power dissipation. RoHS compliant.

Onsemi
22 4

2N7002K

N-Channel MOSFET, surface mount, featuring a 60V drain-source breakdown voltage and 300mA continuous drain current. Offers a maximum drain-source on-resistance of 2 Ohms and a threshold voltage of 2.5V. This component operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 350mW. Packaged in a TO-236-3 case, it is supplied on a 3000-piece tape and reel.

Onsemi
26 6

2N7002W

N-Channel MOSFET, single element, surface mount in SOT-323 package. Features 60V drain-source breakdown voltage, 115mA continuous drain current, and 7.5 Ohm drain-source on-resistance. Operates from -55°C to 150°C with 200mW power dissipation. Includes 5.85ns turn-on delay and 12.5ns turn-off delay. RoHS compliant with tin matte contact plating.

Onsemi
24

2P4M

Silicon Controlled Rectifier, 4A I(T)RMS, 400V V(DRM), 400V V(RRM), 1 Element, PLASTIC PACKAGE-3

NEC
18 2

2SA1013

TRANSISTOR 1000 mA, 160 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5J1A, TO-92MOD, 3 PIN, BIP General Purpose Small Signal

Toshiba
25 4

2SA1015-Y

TRANSISTOR 150 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

Toshiba
23 2

2SA1201

TRANSISTOR 800 mA, 120 V, PNP, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, PW-MINI, SC-62, 3 PIN, BIP General Purpose Small Signal

Toshiba
22 3

2SA1213

TRANSISTOR 2000 mA, 50 V, PNP, Si, SMALL SIGNAL TRANSISTOR, ROHS COMPLIANT, PW-MINI, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal

Toshiba
26 5

2SA733

Small Signal Bipolar Transistor, 0.1A I(C), 50V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, PLASTIC PACKAGE-3

Micro Commercial Components
24 3

2SA812

General Purpose PNP Bipolar Transistor; Polarity: PNP; V(BR)CEO Min (V): 50V; IC (A): 0.1A; HFE Min: 90; HFE Max: 600; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.3V; IC (mA)1: 100mA; IB (mA): 10mA; FT Min (MHz): 180 MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

Galaxy Microelectronics
18

2SC1623

Small Signal Bipolar Transistor,

Galaxy Semi-Conductor
22 4

2SC1815

Small Signal Bipolar Transistor,

Central Semiconductor
23 6

2SC1815-Y

TRANSISTOR 150 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, TO-92, 2-5F1B, SC-43, 3 PIN, BIP General Purpose Small Signal

Toshiba
19 2

2SC2412

General Purpose NPN Bipolar Transistor; Polarity: NPN; V(BR)CEO Min (V): 50V; IC (A): 0.15A; HFE Min: 120; HFE Max: 560; VCE (V): 6V; IC (mA): 1mA; VCE(SAT) (V): 0.4V; IC (mA)1: 50mA; IB (mA): 5mA; FT Min (MHz): 180+ MHz; PTM Max (W): 0.2W; Package: SOT-23; package_code: SOT-23; mfr_package_code: SOT-23

Galaxy Microelectronics
16

2SC2873

TRANSISTOR 2000 mA, 50 V, NPN, Si, SMALL SIGNAL TRANSISTOR, LEAD FREE, 2-5K1A, SC-62, 3 PIN, BIP General Purpose Small Signal

Toshiba
22 4