Semiconductors
2544100
The 600V 32A DIN Rail Fuse Holder is a three-pole, 600V device with a lead-free construction. It features a screw termination and is designed for mounting on DIN rail. The holder has a plastic body and a bulk packaging style. It meets UL and CSA approvals and has a current rating of 32A.
254Z-24
MASTER VERNIER HEIGHT GAUGE, 24IN; Instrument Type:Height Gauge; Measuring Range Max:24; Resolution:0.001; Product Range:-; Base Size:7-1/2 x 4-1/2; Graduations:0.001; Measuring Range Min:0 ;RoHS Compliant: NA
259-24
DIGITAL/DIAL HEIGHT GAUGE, 24IN; Instrument Type:Height Gauge; Measuring Range Max:24; Resolution:0.001; Product Range:-; Accuracy:0.025mm; Base Size:9 x 5; Graduations:0.001; Measuring Range Min:0 ;RoHS Compliant: NA
25LC256
256Kb SPI serial EEPROM with 32K x 8 organization, offering a fast 50ns access time. Features a 10MHz maximum frequency and operates from a 2.5V to 5.5V supply voltage. This surface mount component is housed in a DFN-8 package, measuring 4.92mm x 5.74mm x 0.95mm. It supports write protection and is RoHS compliant.
25LC256-I/MF
256Kb SPI EEPROM, 32Kx8, 50ns Access, 10MHz, DFN-8, 2.5-5.5V
25NHM000B-690
Fuse NH 25A 690V Holder Flat 54 X 21 X 53mm
280MMT
Fuse 280A 690V Bolt 50 X 38 X 83mm Carton UL
2838
Fuse Block 600V Screw Mount
2838
Fuse Block 600V Screw Mount
2891123
Ethernet Switch 8-Port 1000Mbps
293-340
MICROMETER; Measuring Range Max:1; Graduations:-; Accuracy:0.001mm; No. of Anvils:-; Product Range:-; Measuring Resolution:0.00005; Micrometer Range:0-1/0-25mm; Resolution:0.00005 ;RoHS Compliant: NA
293-832
MICROMETER, 0-25MM; Measuring Range Max:25mm; Graduations:0.001mm; Accuracy:-; No. of Anvils:-; Product Range:-; Accuracy:± 2µm/0.0001; Measuring Range Min:0mm; Resolution:0.001mm
2N2222
The 2N2222 is a TO-18 packaged NPN transistor with a collector-emitter breakdown voltage of 30V and a maximum collector current of 800mA. It has a minimum current gain of 100 and a maximum power dissipation of 500mW. The transistor is rated for operation up to 200°C. It is not compliant with RoHS or SVHC regulations.
2N2222A
The 2N2222A is a general-purpose NPN transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 800mA. It features a high current gain of 100 and a transition frequency of 300MHz. The device is packaged in a TO-18 case and has a maximum power dissipation of 500mW. It is not SVHC compliant. The 2N2222A operates within a maximum temperature of 200°C.
2N2907
PNP Silicon Bipolar Junction Transistor (BJT) in a TO-18 metal package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 75 and a transition frequency of 200MHz. Designed for through-hole mounting with a maximum power dissipation of 1.8W. Operating temperature range spans from -65°C to 150°C.
2N2907A
Bipolar (BJT) Transistor PNP 60 V 600 mA 500 mW Through Hole TO-18
2N3055
NPN Bipolar Junction Transistor (BJT) for through-hole, chassis mount applications. Features a 60V collector-emitter voltage (VCEO) and 15A maximum collector current. Offers a 3MHz gain bandwidth product and 115W power dissipation. Operates within a temperature range of -65°C to 200°C. Packaged in a TO-3 case.
2N3904
The NTE Electronics 2N3904 is a general-purpose NPN transistor with a collector-emitter breakdown voltage of 40V and a maximum power dissipation of 625mW. It is packaged in a bulk format and has a transition frequency of 300MHz. The transistor operates over a temperature range of -55°C to 150°C and is compliant with RoHS regulations. The 2N3904 is suitable for a variety of applications including general-purpose switching and amplification.
2N3904G
NPN bipolar junction transistor (BJT) for general-purpose applications. Features a 40V collector-emitter breakdown voltage and a 200mA maximum collector current. Operates with a 60V collector-base voltage and a 6V emitter-base voltage. Offers a minimum DC current gain (hFE) of 60 and a transition frequency of 300MHz. Packaged in a TO-92 (TO-226) through-hole configuration, with a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. RoHS compliant and lead-free.
2N3906
The NTE Electronics 2N3906 is a PNP transistor with a collector-emitter breakdown voltage of 40V and a maximum collector current of 200mA. It is packaged in a TO-226-3 case and is designed for through-hole mounting. The transistor has a maximum power dissipation of 625mW and an operating temperature range of -55°C to 150°C. The device is RoHS compliant and has a transition frequency of 250MHz.