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IRF830
N-channel enhancement mode power MOSFET featuring 500V maximum drain-source voltage and 4.5A continuous drain current. This single-element silicon transistor is housed in a 3-pin TO-220 package with through-hole mounting. Key specifications include a maximum drain-source resistance of 1500 mOhm at 10V and a typical gate charge of 22 nC at 10V. Operating temperature range is -55°C to 150°C, with a maximum power dissipation of 75W.
ICUSB2322I
2 Port Industrial Wall Mountable USB to Serial Adapter Hub with DIN Rail Clips
IL-WX-6P-VF-B-E1000E
Soldering (SMT) Pin Header
IRF3205
Power Field-Effect Transistor, 75A I(D), 55V, 0.008ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-220AB, TO-220AB, 3 PIN
IW-G21M-Q74H-3D002G-E008G-BIK
RZ/G1H Quad-Core SOM, 2GB DDR3, HDMI/LVDS, GbE, USB, CAN
IRF530
N-channel MOSFET with 100V drain-source voltage and 14A continuous drain current. Features 160mΩ maximum drain-source on-resistance and 88W power dissipation. Operates across a wide temperature range from -55°C to 175°C. Packaged in a TO-220AB through-hole mount, this component offers fast switching with turn-on delay of 10ns and fall time of 24ns.
IMC-1812-100UH-10%
Inductor Fixed 100UH 10% 1812 SMD
I350T4V2
Ethernet Server Adapter I350-T4V2
I350T2V2BLK
Server Adapter
IMEWD188
Electrical Enclosure Accessories WINDOW DOOR 1800X800
iW-G15S-PI01-3D512M-E004G-AEN
SBC, 1GHz NXP CPU 2GB DDR3 10Mbps/100Mbps/1000Mbps
IDG10-F02
Membrane G 1/4 Pneumatic Air Dryer +55degC -5degC, 0.85Mpa | SMC Corporation IDG10-F02
iW-G25M-SC04-4L003G-E032G-BCA
APQ8096 SOM: Quad-Core, 3GB LPDDR4, 32GB eMMC, Wi-Fi, BT, GPS
iHAP322
Internal 22XDVD Writer with Smart Erase
IRLZ44N
A fast switching and low resistance, allowing it to be controlled by low-voltage signals (like 5V from an Arduino) to switch higher power loads, making it great for motor control, LED drivers, and power supplies. It's available in a common TO-220 package and features high current (around 47A) and voltage (55V) handling, offering efficiency in various power applications
IRF3710PBF
This N-channel silicon power MOSFET is rated for 100 V drain-to-source voltage and 57 A continuous drain current at 25°C case temperature. It is specified with a maximum drain-to-source on-resistance of 23 mΩ at VGS = 10 V and uses the TO-220AB through-hole package. The device supports operation from -55°C to 175°C and is fully avalanche rated with fast switching characteristics. The datasheet also identifies dynamic dv/dt capability and lead-free construction for industrial applications.
IR2110S
The IR2110S is a half bridge based MOSFET driver from Infineon, designed to operate within a temperature range of -40°C to 125°C. It features a supply voltage range of 3.3 to 20V and is available in the SOIC-16 package type. This device is suitable for use in automotive applications due to its temperature grade of AUTOMOTIVE. The IR2110S has 16 terminals and supports a single function, making it a versatile component for power management ICs.
IR-7561L
Computer Mouse Optical USB 800dpi/1600dpi
IPV-67121-B
Bud Industries IPV-67121-B IP67 Air and Moisture Vent Plug, M12x1.5, Black
IA-6160
CASE ALUM MULT 12.93L X 8.27W