Onsemi
MMBF0202PLT1G
300mA, 20V, P-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236, LEAD FREE, CASE 318-08, 3 PIN
MMBF170
This device is an N-channel enhancement-mode DMOS field-effect transistor in a SOT-23 package. It is rated for 60 V drain-source voltage, 500 mA continuous drain current, and ±20 V gate-source voltage. The transistor is designed for low-voltage, low-current switching applications including small servo motor control, power MOSFET gate drivers, and general switching functions. It provides low on-state resistance with 1.2 Ω typical at VGS = 10 V and ID = 200 mA, along with fast switching performance with 10 ns maximum turn-on and turn-off times. The operating and storage junction temperature range is -55°C to 150°C, and the device is specified as Pb-free.
MMBT2222A
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 40V collector-emitter voltage, 1A maximum DC collector current, and 350mW maximum power dissipation. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads. Operating temperature range is -55°C to 150°C, with a minimum transition frequency of 300MHz.
MMBT2222A 1P
NPN bipolar junction transistor (BJT) for surface mount applications. Features a 40V collector-emitter voltage, 1A maximum DC collector current, and 350mW maximum power dissipation. This single-element transistor is housed in a 3-pin SOT-23 (TO-236AB) plastic package with gull-wing leads. Operating temperature range is -55°C to 150°C, with a minimum transition frequency of 300MHz.
MMBT2907A
PNP Bipolar Junction Transistor (BJT) in a SOT-23 surface mount package. Features a maximum collector current of 800mA and a collector-emitter breakdown voltage of 60V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
MMBT3906
PNP Bipolar Junction Transistor in SOT-23 package. Features a 40V collector-emitter breakdown voltage and a maximum collector current of 200mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 250MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. Surface mountable and RoHS compliant.
MMBT4403
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a maximum collector current of 600mA and a collector-emitter breakdown voltage of 40V. Offers a minimum DC current gain (hFE) of 100 and a transition frequency of 200MHz. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 350mW. RoHS compliant and supplied on tape and reel.
MMBT5401
PNP Bipolar Junction Transistor (BJT) in SOT-23 package. Features 150V collector-emitter voltage (VCEO) and 600mA maximum collector current. Operates with a transition frequency of 300MHz and a maximum power dissipation of 350mW. This surface mount device is RoHS compliant and operates across a temperature range of -55°C to 150°C.
MMBT5551
NPN Bipolar Junction Transistor (BJT) for small signal applications. Features a 160V Collector-Emitter Voltage (VCEO) and 600mA Max Collector Current. Offers a 300MHz Max Frequency and 100MHz Transition Frequency. Packaged in a SOT-23 surface mount case, this RoHS compliant component operates from -55°C to 150°C.
MMBTA05
NPN Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a 60V collector-emitter breakdown voltage and a 500mA maximum collector current. Operates with a minimum DC current gain (hFE) of 100 and a transition frequency of 100MHz. Packaged in a SOT-23 surface-mount case, supplied on a 3000-piece tape and reel. RoHS compliant with a maximum power dissipation of 350mW.
MMBTA42
NPN bipolar junction transistor (BJT) for surface mount applications in a SOT-23 package. Features a maximum collector-emitter voltage (VCEO) of 300V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 40 and a transition frequency (fT) of 50MHz. Maximum power dissipation is 240mW, with operating temperatures ranging from -55°C to 150°C. RoHS compliant and lead-free.
MMBTA55
PNP Bipolar Junction Transistor (BJT) for general-purpose amplification. Features a maximum collector-emitter voltage (VCEO) of 60V and a continuous collector current (IC) of 500mA. Offers a minimum DC current gain (hFE) of 100 and a transition frequency (fT) of 50MHz. Packaged in a compact SOT-23 surface-mount case, this RoHS-compliant component operates from -55°C to 150°C with a power dissipation of 350mW.
MMBTA56
PNP Bipolar Junction Transistor (BJT) in SOT-23 package. Features a maximum collector current of 500mA and a collector-emitter breakdown voltage of 80V. Offers a maximum power dissipation of 350mW and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C. RoHS compliant and lead-free.
MMBTA92
PNP Bipolar Junction Transistor (BJT) in SOT-23 surface mount package. Features a 300V collector-emitter breakdown voltage and a maximum collector current of 500mA. Offers a minimum hFE of 40 and a transition frequency of 50MHz. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 350mW. RoHS compliant and lead-free.
MMBZ5226B
The MMBZ5226B is a surface mount zener diode with a maximum operating temperature range of -55°C to 150°C. It has a maximum power dissipation of 350mW and a maximum reverse leakage current of 25uA. The diode is packaged in a SOT-23 package and is lead free. It has a tolerance of 5% and a DC rated voltage of 3.3V.
MMSZ4688
Surface mount Zener diode with a 4.7V DC rated voltage and 5% voltage tolerance. Features 500mW maximum power dissipation and a Zener current of 50µA. Operating temperature range spans -55°C to 150°C. Packaged in a 3000-piece tape and reel.
MMSZ5226B
Surface mount Zener diode with a 3.3V working voltage and 5% tolerance. Features 500mW power dissipation, 28 Ohm impedance, and a maximum reverse leakage current of 25uA. Operates across a temperature range of -55°C to 150°C. Packaged in tape and reel for automated assembly.
MMSZ5228B
Surface mount Zener diode with a 3.9V working voltage and 5% tolerance. Features 500mW power dissipation, 23 Ohm impedance, and a maximum reverse leakage current of 10uA. Operates across a temperature range of -55°C to 150°C. Packaged in SOD123 for efficient surface mounting.
MMSZ5229B
The MMSZ5229B is a surface mount zener diode with a working voltage of 4.3V and a tolerance of 5%. It has a maximum power dissipation of 500mW and can operate between -55°C and 150°C. The diode is lead free and RoHS compliant, packaged in tape and reel for surface mount applications.
MMSZ5230B
The MMSZ5230B is a surface mount zener diode with a rated voltage of 4.7V and a tolerance of 5%. It has a maximum power dissipation of 500mW and a maximum reverse leakage current of 5uA. The diode operates within a temperature range of -55°C to 150°C. It is compliant with RoHS regulations and is available in a package quantity of 3000 units per reel.