Nexperia
BAT85
Rectifier Diode, Schottky, 1 Element, 0.2A, 30V V(RRM), Silicon, DO-34
BAV99,215
High-speed switching rectifier diode designed for general-purpose applications. Features a maximum repetitive peak reverse voltage of 100V and a continuous forward current of 0.215A. Operates across a wide temperature range from -65°C to 150°C. Housed in a 3-pin SOT-23 (TO-236AB) package with dual terminal positions and two silicon diode elements. Maximum power dissipation is 0.25W.
BCP55-16
Power Bipolar Transistor, 1-Element, Silicon, Plastic/Epoxy, 4 Pin
BSS138P
Small Signal Field-Effect Transistor
BSS84AK
Small Signal Field-Effect Transistor
MMBD4148
Automotive-grade switching diode, single configuration, in a 3-pin SOT-23 (TO-236AB) surface-mount package. Features a 75V peak reverse repetitive voltage, 0.215A maximum continuous forward current, and a 4ns peak reverse recovery time. Maximum power dissipation is 250mW, with an operating temperature range of -65°C to 150°C. The small outline transistor package has gull-wing leads and dimensions of 3mm (L) x 1.4mm (W) x 1mm (H).
PBSS4160T
Small Signal Bipolar Transistor, 1A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, TO-236AB
PBSS5160T
Small Signal Bipolar Transistor
PESD5V0V1BL
The PESD5V0V1BL is a bi-directional transient voltage suppression (TVS) diode from Nexperia. It has a maximum working voltage of 5V and a maximum clamping voltage of 12.5V. The device features a low maximum leakage current of 0.01mA. It is available in a DFN package, suitable for surface mount applications. The PESD5V0V1BL operates over a temperature range of -55°C to 150°C.
PMV16XNR
PMV16XN - 20 V, N-channel Trench MOSFET TO-236 3-Pin
PMZB290UNE
Small Signal Field-Effect Transistor
PRTR5V0U2X
Trans Voltage Suppressor Diode