1N4148

High-speed switching diode uses planar technology in a hermetically sealed axial glass SOD27 package. It supports up to 100 V repetitive peak reverse voltage and 200 mA continuous forward current. Reverse recovery time is rated up to 4 ns, with diode capacitance up to 4 pF and total power dissipation up to 500 mW at 25 °C.

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About 1N4148

The NXP 1N4148 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: High-speed switching diode uses planar technology in a hermetically sealed axial glass SOD27 package. It supports up to 100 V repetitive peak reverse voltage and 200 mA continuous forward current. Reverse recovery time is rated up to 4 ns, with diode capacitance up to 4 pF and total power dissipation up to 500 mW at 25 °C.. Key parameters include Capacitance: 4pF, Current: 4A, Current Rating: 200mA, DC Rated Voltage: 100V, and ECCN: EAR99. 1N4148 is manufactured by NXP as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
NXP
Category
Semiconductors

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Parameters

Capacitance4pF
Current4A
Current Rating200mA
DC Rated Voltage100V
ECCNEAR99
Element ConfigurationSingle
Forward Current200mA
Htsus8541.10.0070
Lead FreeLead Free
Max Forward Surge Current (Ifsm)4A
Max Operating Temperature200°C
Max Repetitive Reverse Voltage (Vrrm)100V
Output Current200mA
Package/CaseSOD
PackagingAmmo Pack
PolarityStandard
Reach SVHC CompliantNo
Reverse Recovery Time4ns
RoHSCompliant
RoHS CompliantYes
Voltage100V