Semiconductors
AO4435
Small Signal Field-Effect Transistor, 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8
AO4468
N-Channel Silicon Metal-oxide Semiconductor FET, designed for small signal applications. Features a continuous drain current of 10.5A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 14mR and a gate-to-source voltage of 20V. This surface-mount device, housed in an SOIC-8 package, operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. Input capacitance is rated at 1.2nF.
AO4606
Transistor
AO4614B
N and P-Channel MOSFET transistor in a SOIC package, designed for surface mount applications. Features a continuous drain current of 5A and a drain-to-source voltage of 40V, with a low Rds(on) of 30mΩ. Operates across a wide temperature range from -55°C to 150°C, supporting a maximum power dissipation of 2W. Input capacitance is 650pF, and the component is RoHS compliant.
AO4801A
Transistor
AO4803A
The AO4803A is a surface mount N-channel MOSFET with a maximum operating temperature range of -55°C to 150°C. It has a continuous drain current of 5A and a drain to source voltage of 30V. The device is packaged in a SOIC package and is mounted on the surface of a printed circuit board. The AO4803A is RoHS compliant and has a maximum power dissipation of 2W.
AO4805
Surface mount N-channel MOSFET with 30V drain-source voltage and 9A continuous drain current. Features low 19mΩ Rds(on) and 2.6nF input capacitance. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 2W. Packaged in SOIC for cut tape applications.
AO4822
Small Signal Field-Effect Transistor, 8A I(D), 30V, 2-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8
AO4828
The AO4828 is a 2 N-Channel FET with a maximum operating temperature of 150°C and a maximum power dissipation of 2W. It has a maximum drain to source voltage of 60V and an input capacitance of 540pF. The device is packaged in a surface mount SOIC package and is RoHS compliant. The AO4828 is suitable for use in a variety of applications, including those requiring high temperature operation.
AO4882
Surface mountable N-channel JFET transistor with a maximum continuous drain current of 8A and a drain-to-source voltage of 40V. Features a low on-resistance of 19mΩ and an input capacitance of 415pF. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2W. This RoHS compliant component is provided in cut tape packaging.
AOD403
P-channel MOSFET, 30V drain-source voltage, 70A continuous drain current, and 6mΩ maximum drain-source on-resistance. This silicon Metal-oxide Semiconductor FET features a TO-252/DPAK package for surface mounting, with a maximum power dissipation of 90W. Operating temperature range is -55°C to 175°C, and input capacitance is 5.3nF. RoHS compliant.
AOD4184A
Surface mount N-channel MOSFET with 40V drain-source voltage and 50A continuous drain current. Features low 7mΩ Rds(on) and 1.8nF input capacitance. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 50W. Packaged in DPAK for efficient thermal management.
AOD4186
Transistor
AOD4189
Surface mount N-channel MOSFET featuring 40V drain-source voltage and 40A continuous drain current. Offers low on-resistance of 18mR at 10V, with a maximum of 22mR. Operates across a wide temperature range from -55°C to 175°C, with a maximum power dissipation of 62.5W. Includes a threshold voltage of -1.7V and input capacitance of 1.87nF, packaged in TO-252-3.
AOD4286
The AOD4286 is a 100V N-Channel MOSFET with a continuous drain current of 14A. It features an input capacitance of 390pF and a maximum power dissipation of 30W. The device is packaged in a TO-252-3 surface mount package and is RoHS compliant. It operates over a temperature range of -55°C to 175°C.
AOD476
The AOD476 is a DPAK-3/2 N-channel transistor from Alpha & Omega with a maximum operating temperature range of -55°C to 175°C. It has a maximum drain to source voltage of 20V and a continuous drain current of 25A. The device is rated for a maximum power dissipation of 33.3W, but is typically limited to 2.5W. It is available in a surface mount package with a package type of TO-252-3 and is packaged in cut tape.
AOD478
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET
AOD508
N-Channel Power MOSFET, 30V Vds, 70A continuous drain current, and 3mΩ Rds(on). This silicon Metal-oxide Semiconductor FET features a TO-252 DPAK-3/2 package for surface mounting, with a maximum power dissipation of 2.5W. It offers a wide operating temperature range from -55°C to 175°C and includes 2.01nF input capacitance. RoHS compliant and available in cut tape packaging.
AOD514
The AOD514 is a surface mount N-Channel MOSFET with a maximum drain to source voltage of 30V and continuous drain current of 54A. It has a maximum power dissipation of 2.5W and an on-resistance of 6.5mR. The device is packaged in a TO-252-3 package and is lead free. It is compliant with RoHS standards and has an input capacitance of 951pF.
AOD518
Power Field-Effect Transistor, N-Channel, Metal-oxide Semiconductor FET