Semiconductors
AGC-V-1/10-R
Fuse Miniature Fast Acting 0.1A 250V Axial 6.76 X 32.82mm Glass CE/CSA/UL
AGC-V-1/16-R
The Eaton AGC-V-1/16-R fuse is a 250V rated axial lead fuse with a current rating of 63mA and a DC cold resistance of 29 ohms. It features a tin-plated contact and is packaged in bulk. The fuse has a diameter of 6.76mm and a lead length of 38.1mm, with a weight of 0.016oz. It meets UL and CSA approvals and is RoHS compliant.
AGC-V-15-R
The AGC-V-15-R fuse is a 15A, 32V axial fuse from Eaton, approved to UL and CSA standards. It features a tin contact plating and a through-hole mount style. The fuse has a diameter of 6.35mm and a length of 32.82mm, with a lead length of 38.1mm. It is available in bulk packaging and is RoHS compliant.
AIMB-274L-00A1E
Motherboard, Intel Core/Pentium/Xeon G3420/G3320TE/i3-4330TE/i3-4330/i5-4570TE/i5-4570S/i7-4770TE/i7-4770S/E3-1268L V3 Core i3/Core i5/Core i7 DDR3 1920x1200Pixels 10Mbps/100Mbps/1000Mbps
AKG5524100ME
FISCHER ELEKTRONIK AKG 55 24 100 ME Metallic Enclosure, Miniature, D Sub, Case, Multipurpose, 24 mm, 55 mm, 100 mm, Aluminium, Natural
AKG552450ME
FISCHER ELEKTRONIK AKG 55 24 50 ME Metallic Enclosure, Miniature, D Sub, Case, Multipurpose, 24 mm, 55 mm, 50 mm, Aluminium, Natural
AM-550
MULTIMETER, DIGITAL, HVAC, AUTO/MANUAL; DMM Functions:AC/DC Current, AC/DC Voltage, Capacitance, Continuity, Diode, Frequency, Resistance, Temperature; Current Measure AC Max:10A; Current Measure DC Max:10A; Display Count:6000 ;RoHS Compliant: NA
AO3400
Transistor
AO3400A
N-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mounting in a TO-236-3 package. Features a continuous drain current of 5.7A and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source on-resistance of 18mΩ, with a maximum of 26.5mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.4W. Includes a threshold voltage of 650mV and input capacitance of 630pF. This component is lead-free and RoHS compliant.
AO3401A
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3
AO3402
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3
AO3407A
P-Channel MOSFET, TO-236-3 package, offering a 30V drain-to-source voltage and 4.3A continuous drain current. Features 48mΩ Rds On Max, 1.4W power dissipation, and 830pF input capacitance. Designed for surface mount applications, this single-element silicon transistor operates from -55°C to 150°C and is RoHS compliant and lead-free.
AO3415A
N-channel MOSFET transistor in a TO-236-3 package, designed for surface mounting. Features a continuous drain current of 5A and a drain-to-source voltage of 20V. Offers a low on-resistance of 45mΩ maximum. Operates across a wide temperature range from -55°C to 150°C with a maximum power dissipation of 1.5W. This component is RoHS compliant and lead-free.
AO3416
N-Channel Silicon Metal-Oxide Semiconductor FET, designed for surface mount applications. Features a continuous drain current of 6.5A and a drain-to-source voltage of 20V. Offers a low on-resistance of 22mΩ and an input capacitance of 1.16nF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 1.4W. Packaged in a TO-236-3 (GREEN PACKAGE-3) and is RoHS compliant.
AO3422
N-Channel Power MOSFET, 55V Drain-Source Voltage, 2.1A Continuous Drain Current, and 160mΩ Max Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a 1.3V threshold voltage and 1.25W maximum power dissipation. Designed for surface mounting in a TO-236-3 package, it operates from -55°C to 150°C and includes fast switching times with a 2.3ns turn-on delay and 16.5ns turn-off delay. RoHS compliant and available in cut tape packaging.
AO4406A
The AO4406A is a power MOSFET with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It features a maximum power dissipation of 3.1W and a maximum drain to source voltage of 30V. The device has a continuous drain current of 13A and an input capacitance of 910pF. It is packaged in a surface mount SOIC-8 package and is available on cut tape.
AO4407A
P-Channel Silicon Metal-oxide Semiconductor FET, a single-element JFET designed for surface mounting in an SOIC-8 package. Features a continuous drain current of 12A and a drain-to-source voltage of 30V. Offers a low on-resistance (Rds On Max) of 11mΩ and an input capacitance of 2.6nF. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 3.1W. This component is lead-free and RoHS compliant.
AO4409
The AO4409 is a surface mount junction field-effect transistor with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 3.1W and a continuous drain current of 15A. The device is packaged in a lead-free SOIC-8 package and is RoHS compliant.
AO4410
Transistor
AO4420
Small Signal Field-Effect Transistor, 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, SOIC-8