Semiconductors
SS56F
Rectifier Diode,
SS58
Rectifier Diode, Schottky, 1 Element, 1A, Silicon, HERMETIC SEALED, MELF-2
SS58B
Rectifier Diode,
SS-5F-8A-AP
Fuse Subminiature Fast Acting 8A 125V Radial 8.5 X 4.3 X 7.85mm Ammo PSE/cULus
SS-5F-8A-BK
Subminiature fast-acting fuse, 8A current rating, 125V AC voltage rating. Features radial termination and through-hole mounting. Operates within a temperature range of -40°C to 85°C with a DC cold resistance of 9.9mR. Dimensions are 8.5mm length, 8.35mm height, and 7.85mm width. RoHS compliant with cULus and PSE approvals.
SS-5H-1A-BK
This radial fuse from Eaton features a current rating of 1A and a voltage rating of 300V. It has a time delay blow characteristic and is approved to several international standards, including VDE, TUV, cURus, CQC, PSE, and KC. The fuse is made of plastic and has a body height of 8.35mm and a body length of 8.5mm. It is designed for through hole mounting and is suitable for use in temperatures ranging from -40°C to 85°C.
SS-5H-2A-BK
Fuse Subminiature Slow Blow Acting 2A 250V Radial 8.5 X 4.3 X 7.85mm Plastic Bulk CQC/KC/PSE/TUV/VDE/cULus
SS-5H-5A-AP
The Eaton SS-5H-5A-AP fuse is a radial through hole fuse with a current rating of 5A and a voltage rating of 250V AC. It has a maximum operating temperature of 85°C and a minimum operating temperature of -40°C. The fuse is approved to various international standards, including VDE, TUV, cURus, CQC, PSE, and KC. It is packaged in an ammo pack with a quantity of one and is compliant with halogen-free and RoHS regulations.
SS8050
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, NPN, Silicon, TO-92, TO-92, 3 PIN
SS8550
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
SS8550 Y2(RANGE:200-350)
Small Signal Bipolar Transistor, 1.5A I(C), 25V V(BR)CEO, 1-Element, PNP, Silicon, TO-92, TO-92, 3 PIN
SSL24B
Schottky Diodes & Rectifiers Low VF 2Amp 40v SMD Schottky Rect
SSL34B
Schottky Diodes & Rectifiers Low VF 3Amp 40v SMD Schottky Rect
SSL34F
Schottky Diodes & Rectifiers Low VF 3Amp 40v SMD Schottky Rect
STK4038
IC, Voltage: 38 V, Power: 1 x 60 W, Frequency: 50 KHz, Power Amplifier
STK4038II
IC, Voltage: 38 V, Power: 1 x 60 W, Frequency: 50 KHz, Power Amplifier
STM32L432KBU6TR
32-bit RISC microcontroller featuring an Arm Cortex-M4 core with FPU, operating at up to 80 MHz. This ultra-low-power device offers 128 Kbytes of FLASH memory and 65 Kbytes of RAM, with 26 I/O lines. Includes USB connectivity, PWM channels, ADC, DAC, and DMA. Designed for industrial applications with a temperature range of -40°C to 85°C and a supply voltage from 1.71V to 3.6V. Packaged in a 32-terminal S-XQCC-N32 (5x5mm) JEDEC package.
STP55NF06
N-channel power MOSFET featuring 60V drain-source breakdown voltage and 50A continuous drain current. This component offers a low 18mΩ drain-source on-resistance and 110W maximum power dissipation. Designed for through-hole mounting in a TO-220 package, it operates within a -55°C to 175°C temperature range. Key switching characteristics include a 20ns turn-on delay and 36ns turn-off delay.
STP75NF75
N-channel power MOSFET featuring 75V drain-source breakdown voltage and 80A continuous drain current. This STripFET™ II device offers a low 9.5mΩ typical drain-source on-resistance and 11mΩ maximum. Housed in a TO-220 package for through-hole mounting, it supports a maximum power dissipation of 300W and operates from -55°C to 175°C. Key switching characteristics include a 25ns turn-on delay and 30ns fall time.
SX1280DVK1ZHP
The SX1280DVK1ZHP is a development kit for the SX1280 2.4GHz wireless RF transceiver. It features the LoRa modulation for ultra-long range communication in the ISM band, integrated time-of-flight ranging capability, and support for multiple physical layers including FLRC, (G)FSK, and BLE-compatible PHY. The kit provides a platform to evaluate range, power consumption, and advanced features like asset tracking and localization.