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ICECARE-07-1D-R10
Tablet PCs Texas TI Sitara AM3715 7in TFT LCD Display
ISP186
Racks u0026 Rack Cabinet Accessories PANELS 1800HX600D
IBP18
Racks u0026 Rack Cabinet Accessories BRIDGE PANEL 1800 HT
IRF840
N-channel MOSFET transistor featuring a 500V drain-source breakdown voltage and 8A continuous drain current. This through-hole component offers a low 850mΩ drain-source on-resistance and 125W maximum power dissipation. Operating across a wide temperature range from -55°C to 150°C, it includes fast switching characteristics with turn-on delay of 14ns and fall time of 20ns. Housed in a TO-220AB package, it supports up to 20V gate-to-source voltage.
IRFB4110PBF
N-Channel Power MOSFET, 100V drain-source voltage, 180A continuous drain current, and 4.5mΩ maximum drain-source on-resistance. This silicon, metal-oxide semiconductor FET features a TO-220AB package with through-hole mounting and a maximum power dissipation of 370W. Operating temperature range is -55°C to 175°C, with a gate-source voltage of 20V. RoHS compliant and lead-free.
ISP206
Racks u0026 Rack Cabinet Accessories PANELS 2000HX600D
I350T4V2BLK 936716
Ethernet Server Adapter I350-T4V2
I352HL,TGBG
Grey Panel Mount Enclosure, 7.46x10.21x0.32inch, IP67, UL94 V-0
IX20-WAG4
LTE Router | 10/100 Mbps | 2 LAN | -20°C to 70°C
ICUSB232D
1 Port USB to RS232 DB9 Serial Adapter with Detachable 6ft USB A to B Cable
IRFB7440PBF
N-channel Power MOSFET featuring 40V drain-source voltage and 172A continuous drain current. This single-element HEXFET technology MOSFET is housed in a TO-220AB package with 3 through-hole pins and a tab. It offers a low drain-source on-resistance of 2.5 mΩ at 10V and a maximum power dissipation of 143W, operating across a wide temperature range of -55°C to 175°C.
IB903F-Q2G
AMD EMBEDDED G-SERIES SOC 3.5-INCH DISK SIZE SBC
IB112
ARM-Based SBC with Freescale i.MX536 Cortex-A9 Dual Core 800MHz SoC
IRL2203NPBF
30V 116A TO-220AB Through Hole HEXFET Power MOSFET
IRLZ34NPBF
N-Channel Power MOSFET featuring 55V drain-source voltage and 30A continuous drain current. This silicon, metal-oxide semiconductor FET offers a low 35mΩ drain-source on-resistance and 68W maximum power dissipation. Designed for through-hole mounting in a TO-220AB package, it operates from -55°C to 175°C and is RoHS compliant. Key switching characteristics include a 8.9ns turn-on delay and 21ns turn-off delay.
IRL2203
The IRL2203NPBF is a 30V 116A power MOSFET packaged in a TO-220AB through hole package. It has a maximum operating temperature range of -55°C to 175°C and a maximum power dissipation of 180W. The device is RoHS compliant and lead free. It has a low on-resistance of 7mR and fast switching times of 11ns and 23ns.
ISKJ6
Racks u0026 Rack Cabinet Accessories SLAVE JOIN KIT 600W
IP-6138
Enclosures, Boxes, u0026 Cases 7.08 x 10.20 x 4.13 INSTRUMENT CASE
IMB207DGGA
Single Board Computer with 32GB DDR3, 1.6GHz, 12V, Socket Mount
IP340
RISER CARD WITH 2X PCI