GBJ5010

Bridge Rectifier Diode,

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About GBJ5010

The Lite-On GBJ5010 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: Bridge Rectifier Diode,. Key parameters include Breakdown Voltage-Min: 1000, Diode Element Material: SILICON, Diode Type: BRIDGE RECTIFIER DIODE, Max Operating Temperature: 150, and Military Spec: False. GBJ5010 is manufactured by Lite-On as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Lite-On
Category
Semiconductors

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Parameters

Breakdown Voltage-Min1000
Diode Element MaterialSILICON
Diode TypeBRIDGE RECTIFIER DIODE
Max Operating Temperature150
Military SpecFalse
Min Operating Temperature-55
Number of Elements4
Number of Terminals4
REACHCompliant
Rep Pk Reverse Voltage-Max1000
RoHSYes
Terminal PositionSINGLE