2N5401

MULTICOMP 2N5401 Bipolar (BJT) Single Transistor, PNP, 150 V, 0.625 W, 600 mA, 50

Download PDF

About 2N5401

The Multicomp 2N5401 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: MULTICOMP 2N5401 Bipolar (BJT) Single Transistor, PNP, 150 V, 0.625 W, 600 mA, 50. Key parameters include Collector Emitter Breakdown Voltage: 150V, Collector Emitter Voltage (VCEO): 150V, Dropout Voltage: 1.7V, Max Operating Temperature: 70°C, and Max Power Dissipation: 625mW. 2N5401 is manufactured by Multicomp as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Multicomp
Category
Semiconductors
File Size
291 KB

Ask AI Assistant

Ask questions about 2N5401 specifications

AI Powered

Click to ask a quick question:

Parameters

Collector Emitter Breakdown Voltage150V
Collector Emitter Voltage (VCEO)150V
Dropout Voltage1.7V
Max Operating Temperature70°C
Max Power Dissipation625mW
Output Current40mA
Package/CaseTO-92
PolarityPNP
Power Dissipation625mW
Reach SVHC CompliantNo
RoHSCompliant