2N5401
MULTICOMP 2N5401 Bipolar (BJT) Single Transistor, PNP, 150 V, 0.625 W, 600 mA, 50
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About 2N5401
The Multicomp 2N5401 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: MULTICOMP 2N5401 Bipolar (BJT) Single Transistor, PNP, 150 V, 0.625 W, 600 mA, 50. Key parameters include Collector Emitter Breakdown Voltage: 150V, Collector Emitter Voltage (VCEO): 150V, Dropout Voltage: 1.7V, Max Operating Temperature: 70°C, and Max Power Dissipation: 625mW. 2N5401 is manufactured by Multicomp as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Multicomp
- Category
- Semiconductors
- File Size
- 291 KB
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Parameters
| Collector Emitter Breakdown Voltage | 150V |
| Collector Emitter Voltage (VCEO) | 150V |
| Dropout Voltage | 1.7V |
| Max Operating Temperature | 70°C |
| Max Power Dissipation | 625mW |
| Output Current | 40mA |
| Package/Case | TO-92 |
| Polarity | PNP |
| Power Dissipation | 625mW |
| Reach SVHC Compliant | No |
| RoHS | Compliant |