Semiconductors
BK/S-8201-1-SNP
This is a chassis mount fuse with a current rating of 30A and a voltage rating of 300V. It has a maximum operating temperature of 110°C and a minimum operating temperature of 0°C. The fuse is available in a bulk packaging quantity of 1000 and is terminated with a quick connect. It is not radiation hardened and contains lead.
BK/S-8202-1X-R
This 300V 20A fuse features a chassis mount with bolt termination and is rated for operation between 0°C and 130°C. It has a thermoplastic body with a bronze contact and tin lead plating. The fuse is available in bulk packaging with 1000 units per package.
BK/S-8301-3-R
3-pole, 3-circuit fuse holder for 3AG (31.8mm x 6.35mm) fuses, rated for 300V AC/DC and 30A. Features screw termination with tin/lead plated bronze contacts and a black housing. Designed for chassis mounting via bolt, operating between 0°C and 130°C. Illuminated for enhanced visibility.
BLM18PG121SN1D
Multi-layer ferrite bead with 120 Ohm impedance at 100MHz, featuring a 2A current rating and 50mR DC resistance. This 0603 (1608 metric) SMD component utilizes a ferrite core and operates within a -55°C to 125°C temperature range. The unshielded, single-circuit device is supplied on tape and reel, adhering to RoHS compliance.
BM22W
BOX, ABS, WHITE, 58X143X82MM; Enclosure Type:Multipurpose; External Height - Metric:143mm; External Width - Metric:82mm; External Depth - Metric:58mm; Enclosure Material:ABS (Acrylonitrile Butadiene Styrene); Body Colour:White; IP Rating:Not Rated; NEMA Rating:Not Rated; External Height - Imperial:5.63; External Width - Imperial:3.23; External Depth - Imperial:2.28; Product Range:-; SVHC:No SVHC (15-Jun-2015); Guide Slots:Yes; Surface Finish:Polished; Wall Thickness:3mm
BNC4MML1MRG58
TEST LEAD, 1M; Test Connector Type A:BNC Plug; Test Connector Type B:4mm Stackable Banana Plug; Voltage Rating:-; Current Rating:-; Insulator Colour:-; Lead Length:1m; Product Range:-; SVHC:No SVHC (15-Jun-2015)
BNCCCL1MRG58
TEST LEAD, 1M, 1.5KV; Test Connector Type A:BNC Plug; Test Connector Type B:Crocodile Clips x 2; Voltage Rating:1.5kV; Current Rating:-; Insulator Colour:-; Lead Length:1m; Product Range:-; SVHC:No SVHC (15-Jun-2015)
BP/ABC-20
This general purpose fuse holder is rated for 20A and 125V DC, with a maximum voltage rating of 250V AC. The holder features nickel-plated contacts and a clip termination. It is available in bulk packaging with 5 units per package. The holder has a diameter of 6.35mm and a length of 31.75mm, with a weight of 0.098767oz. It meets CSA and UR approvals.
BSC014N04LS
The BSC014N04LS is a surface mount MOSFET with a maximum drain to source voltage of 40V and continuous drain current of 32A. It has a maximum power dissipation of 2.5W and an on-resistance of 1.4 milliohms. The device is packaged in a 8-pin TDSON-8FL package and is lead free and RoHS compliant. It is suitable for use in a variety of applications including power supplies and motor control circuits.
BSC050N04LSG
The BSC050N04LSG is a 40V N-Channel MOSFET with a maximum continuous drain current of 85A. It features a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. The device is packaged in a SMALL OUTLINE, R-PDSO-F5 package and is RoHS compliant. It has a maximum power dissipation of 57W and a threshold voltage of 1.2V.
BSC0902NS
The BSC0902NS is a 100A MOSFET from Infineon with a maximum operating temperature of 150°C and a minimum operating temperature of -55°C. It has a maximum power dissipation of 48W and is lead free. The device is packaged in a small outline R-PDSO-F5 package and is available in tape and reel packaging. The BSC0902NS is RoHS compliant and features a turn-off delay time of 21ns and a turn-on delay time of 4.2ns.
BSC0904NSI
Power Field-Effect Transistor, 20A I(D), 30V, 0.0052ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN, PLASTIC, TDSON-8
BSC090N03LSGATMA1
N-channel silicon MOSFET featuring 30V drain-source voltage and 48A continuous drain current. Offers low on-state resistance of 7.5mR (typical) and 9mR (max) at 25°C. Designed for surface mount applications with a TDSON-8 plastic package. Operates across a wide temperature range from -55°C to 150°C, with a maximum power dissipation of 32W. Halogen-free and RoHS compliant.
BSC093N04LSGATMA1
N-channel power MOSFET featuring 40V drain-source voltage and 13A continuous drain current. Offers low on-state resistance of 9.3mΩ (typical) and 7.8mΩ (drain-to-source). Designed for surface mount applications with a TDSON-8 package, this silicon metal-oxide semiconductor FET operates within a -55°C to 150°C temperature range and supports a maximum power dissipation of 35W. Includes fast switching characteristics with turn-on delay of 3.6ns and fall time of 2.8ns.
BSC093N15NS5
This device is an N-channel power MOSFET rated for 150 V drain-source voltage and up to 87 A drain current. It is specified with a maximum on-resistance of 9.3 mΩ and is housed in a SuperSO8 5x6 package identified by Infineon as PG-TDSON-8-7. The part belongs to the OptiMOS™ 5 150 V family and is intended for low-voltage drives, telecom equipment, and solar applications. Infineon highlights lower output charge, ultra-low reverse recovery charge, and increased commutation ruggedness for higher switching-frequency operation.
BSS123
N-channel MOSFET transistor in a SOT-23 package, featuring a 100V drain-source breakdown voltage and a continuous drain current of 170mA. This surface-mount component offers a low drain-source on-resistance of 6 Ohms. Operating across a wide temperature range of -55°C to 150°C, it boasts fast switching speeds with a turn-on delay of 1.7ns and a fall time of 9ns. The device is RoHS compliant and designed for tape and reel packaging.
BSS138
N-channel enhancement-mode field-effect transistor supports logic-level gate drive in a compact SOT-23 surface-mount package. The device is rated for 50 V drain-source voltage and 220 mA continuous drain current. On-resistance is specified at 3.5 ohm maximum with 10 V gate drive and 6.0 ohm maximum with 4.5 V gate drive. The package is Pb-free and halogen-free, with reel packaging for automated assembly.
BSS138BK
360mA, 60V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB, PLASTIC PACKAGE-3
BSS138K
N-Channel Logic Level Enhancement Mode Field Effect Transistor, 50V Drain to Source Breakdown Voltage, 220mA Continuous Drain Current, and 1.6 Ohm maximum Drain-Source On Resistance. This single-element transistor features a 600mV nominal Gate to Source Voltage and 58pF input capacitance. Packaged in a SOT-23 surface mount case with tin, matte contact plating, it operates from -55°C to 150°C with 350mW maximum power dissipation. Ideal for switching applications, it offers fast switching speeds with turn-on delay times of 5ns and fall times of 35ns.
BSS138L
Single N-channel logic-level power MOSFET featuring 50V drain-source voltage and 200mA continuous drain current. This 3-terminal device offers a low on-resistance of 3.5 Ohms and is housed in a TO-236AB JEDEC package. Designed with one active element, it is supplied on a 3000-piece reel for high-volume applications.