The IRG4BC40W is a 600V insulated gate bipolar transistor with a maximum collector current of 40A. It is packaged in a TO-220-3 flange mount configuration and is available in quantities of 50. The device is not RoHS compliant. The transistor has a maximum power dissipation of 160W and a collector emitter breakdown voltage of 600V.

International RectifierSemiconductors

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IPL78

Racks u0026 Rack Cabinet Accessories IME PLINTH 700X800

HammondEnclosures Boxes Racks

IME1878

Electrical Enclosures 77X28X32 MOD ENCL

HammondEnclosures Boxes Racks

IWSSOG-B-141-O

EMI Gaskets O-Rings Enduro-Shield and Flexi-Shield

Spira ManufacturingHardware

IPC-6606P3-30CE

Computer Chassis Desktop Mount/Wall Mount 173mm Length 254mm Height 396mm Depth

AdvantechEnclosures Boxes Racks

ISP204

Racks u0026 Rack Cabinet Accessories PANELS 2000HX400D

HammondEnclosures Boxes Racks

IRFB7430PBF

N-channel enhancement mode power MOSFET featuring HEXFET process technology. This single-element silicon transistor offers a maximum drain-source voltage of 40V and a continuous drain current of 409A. Housed in a TO-220AB package with 3 through-hole pins and a tab, it boasts a low drain-source on-resistance of 1.3 mOhm at 10V. Operating temperature range is -55°C to 175°C, with a maximum power dissipation of 375W.

InfineonSemiconductors

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