N-channel silicon MOSFET featuring 200V drain-source voltage and 22A continuous drain current. Offers a low on-resistance of 0.025 ohms, enabling efficient power switching. Designed with a 1-element configuration and 7 terminals, operating across a temperature range of -40°C to 150°C. This metal-oxide semiconductor FET is HALOGEN FREE and ROHS COMPLIANT.

Efficient Power ConversionSemiconductors

17 4

EPC2034C

N-channel Gallium Nitride (GaN) power MOSFET featuring a low on-resistance of 0.008 ohms and a drain-source voltage rating of 200V. This single-element transistor is designed for high-power applications, capable of handling a continuous drain current of 48A. It operates within a temperature range of -40°C to 150°C and utilizes a 24-terminal die with upper terminal positioning.

Efficient Power ConversionSemiconductors

EPC2020

N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) designed for high-power applications. Features a low on-resistance of 0.0022 ohms and a drain-source voltage rating of 60V. Supports a continuous drain current of 60A. This single-element device is presented as a DIE-30 package with 30 terminals.

Efficient Power ConversionSemiconductors

17 3

EPC2053

N-Channel Gallium Nitride (GaN) High Electron Mobility Transistor (HEMT) for high-power applications. Features a low on-resistance of 0.0038 ohms and a drain-source voltage rating of 100V. Supports a continuous drain current of 48A. Operates across a temperature range of -40°C to 150°C. This single-element device is presented in a DIE-28 package.

Efficient Power ConversionSemiconductors

EPC2021

N-Channel Gallium Nitride (GaN) Metal-Oxide Semiconductor Field-Effect Transistor (MOSFET) for high-power applications. Features a low on-resistance of 0.0025 ohms and a drain-source voltage rating of 80V. Supports a continuous drain current of 60A. This single-element device is presented as a 30-terminal die.

Efficient Power ConversionSemiconductors

17 4