Microchip

WED3DG6466V75AD1

DRAM Module 512MB SDRAM 133MHz 64-bit 144SODIMM 3.3V

Data Storage
33 3

WED3DG6466V75AD1I

DRAM 512MB SDRAM 133MHz 64Mx64 USODIMM 144-Pin

Data Storage
31 4

WED3DG6466V7AD1

DRAM Module 512MB SDRAM 133MHz 64-bit 144SODIMM 3.3V

Data Storage
33 4

WED3DG6466V7AD1I

DRAM Module 512MB SDRAM 144-Pin USODIMM 133MHz 3.3V

Data Storage
36 4

WV3EG232M64STSU335D4IMG

DDR SDRAM 512MB 200SODIMM 333MHz 64-bit 2.5V

Data Storage
50 3

WV3EG232M64STSU335D4ING

DDR SDRAM 512MB 200-SODIMM 333MHz 64-bit USODIMM

Data Storage
29 4

WV3EG232M64STSU335D4ISG

DRAM Module 512MB DDR2 333MHz 200SODIMM 32Mx64

Data Storage
31 5

WV3EG232M64STSU335D4MG

DDR SDRAM 512MB 200-pin USODIMM 333MHz 64-bit

Data Storage
29 3

WV3EG232M64STSU335D4NG

DRAM Module 512MB DDR2 333MHz 200SODIMM 64-bit

Data Storage
33 4

WV3EG232M64STSU335D4SG

DDR SDRAM 512MB 200SODIMM 333MHz 64-bit USODIMM

Data Storage
29 4

WV3EG232M64STSU403D4SG

512Mbyte DDR SDRAM DRAM Module, 200-pin USODIMM, operating at 400 MHz with a 64-bit data bus width. Features 8 x 512Mbit TSOP chips, organized as 32Mx64x2, with a CAS Latency of 3 and a maximum access time of 0.65 ns. This unbuffered small outline dual in-line memory module supports dual ranks and operates from a 2.3V to 2.7V supply, with a typical voltage of 2.5V. Designed for socket mounting, it has a non-lead-frame SMT basic package type and a maximum package length of 67.75mm.

Semiconductors
42 3
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