Alpha u0026 Omega
AO3400
Transistor
AO3400A
N-Channel Silicon Metal-oxide Semiconductor FET, designed for surface mounting in a TO-236-3 package. Features a continuous drain current of 5.7A and a drain-to-source breakdown voltage of 30V. Offers a low drain-to-source on-resistance of 18mΩ, with a maximum of 26.5mΩ. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 1.4W. Includes a threshold voltage of 650mV and input capacitance of 630pF. This component is lead-free and RoHS compliant.
AO3401A
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, P-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3
AO3402
Small Signal Field-Effect Transistor, 4A I(D), 30V, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, GREEN PACKAGE-3
AO3422
N-Channel Power MOSFET, 55V Drain-Source Voltage, 2.1A Continuous Drain Current, and 160mΩ Max Rds On. This single-element silicon Metal-Oxide-Semiconductor FET features a 1.3V threshold voltage and 1.25W maximum power dissipation. Designed for surface mounting in a TO-236-3 package, it operates from -55°C to 150°C and includes fast switching times with a 2.3ns turn-on delay and 16.5ns turn-off delay. RoHS compliant and available in cut tape packaging.