MT9HTF12872AY-667E1
DRAM Module DDR2 SDRAM 1Gbyte 240UDIMM Tray
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About MT9HTF12872AY-667E1
The Micron MT9HTF12872AY-667E1 Data Storage datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: DRAM Module DDR2 SDRAM 1Gbyte 240UDIMM Tray. Key parameters include CAS Latency: 5, Chip Configuration: 128Mx8, Chip Density: 1G, Data Bus Width: 72, and ECC Support: Yes. MT9HTF12872AY-667E1 is manufactured by Micron as part of their Data Storage product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Micron
- Category
- Data Storage
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Parameters
| CAS Latency | 5 |
| Chip Configuration | 128Mx8 |
| Chip Density | 1G |
| Data Bus Width | 72 |
| ECC Support | Yes |
| Main Category | DRAM Module |
| Maximum Access Time | 0.045 |
| Maximum Clock Rate | 667 |
| Maximum Operating Current | 1440 |
| Max Operating Supply Voltage | 1.9 |
| Max Operating Temperature | 85 |
| Min Operating Supply Voltage | 1.7 |
| Min Operating Temperature | 0 |
| Module Type | 240UDIMM |
| Number of Chip per Module | 9 |
| Number of Ranks | Single |
| Organization | 128Mx72 |
| Package/Case | UDIMM |
| Package Family Name | DIM |
| Pin Count | 240 |
| RoHS | Yes with Exemption |
| RoHS Version | 2011/65/EU |
| Subcategory | DDR2 SDRAM |
| Total Density | 1Gbyte |
| Typical Operating Supply Voltage | 1.8 |