MT9HTF12872AY-667E1

DRAM Module DDR2 SDRAM 1Gbyte 240UDIMM Tray

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About MT9HTF12872AY-667E1

The Micron MT9HTF12872AY-667E1 Data Storage datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: DRAM Module DDR2 SDRAM 1Gbyte 240UDIMM Tray. Key parameters include CAS Latency: 5, Chip Configuration: 128Mx8, Chip Density: 1G, Data Bus Width: 72, and ECC Support: Yes. MT9HTF12872AY-667E1 is manufactured by Micron as part of their Data Storage product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Micron
Category
Data Storage

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Parameters

CAS Latency5
Chip Configuration128Mx8
Chip Density1G
Data Bus Width72
ECC SupportYes
Main CategoryDRAM Module
Maximum Access Time0.045
Maximum Clock Rate667
Maximum Operating Current1440
Max Operating Supply Voltage1.9
Max Operating Temperature85
Min Operating Supply Voltage1.7
Min Operating Temperature0
Module Type240UDIMM
Number of Chip per Module9
Number of RanksSingle
Organization128Mx72
Package/CaseUDIMM
Package Family NameDIM
Pin Count240
RoHSYes with Exemption
RoHS Version2011/65/EU
SubcategoryDDR2 SDRAM
Total Density1Gbyte
Typical Operating Supply Voltage1.8