The Micron MT8VDDT6464HY-265F3 Data Storage datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: DRAM Module 512MB DDR2 200SODIMM 266MHz 64-bit. Key parameters include AEC Qualified: No, Automotive: No, Basic Package Type: Non-Lead-Frame SMT, Cage Code: 6Y440, and CAS Latency: 2.5. MT8VDDT6464HY-265F3 is manufactured by Micron as part of their Data Storage product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer: Micron
Category: Data Storage
File Size: 271 KB

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Parameters

AEC Qualified	No
Automotive	No
Basic Package Type	Non-Lead-Frame SMT
Cage Code	6Y440
CAS Latency	2.5
Chip Configuration	64Mx8
Chip Density	512M
Data Bus Width	64
ECCN	EAR99
ECC Support	No
EU RoHS	Yes
HTS Code	8473301140
Jedec	MO-224
Lead Shape	No Lead
Main Category	DRAM Module
Maximum Clock Rate	266
Maximum Operating Current	1160
Max Operating Supply Voltage	2.7
Max Operating Temperature	70
Min Operating Supply Voltage	2.3
Min Operating Temperature	0
Module Type	200SODIMM
Mounting	Socket
Number of Chip per Module	8
Number of Ranks	Single
Organization	64Mx64
Package/Case	SODIMM
Package Description	Small Outline Dual In Line Memory Module
Package Family Name	DIM
Package Height (mm)	31.9(Max)
Package Length (mm)	67.75(Max)
Package Width (mm)	3.8(Max)
PCB	200
Pin Count	200
Pin Pitch (mm)	0.61
PPAP	No
RoHS Versions	2002/95/EC
Schedule B	8473300002
Subcategory	DDR SDRAM
Total Density	512Mbyte
Typical Operating Supply Voltage	2.5