BZX55B8V2

DO-35 500mW 2% Small Signal Zener Diode

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About BZX55B8V2

The Taiwan Semiconductor BZX55B8V2 Uncategorized datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: DO-35 500mW 2% Small Signal Zener Diode. Key parameters include Clamping Voltage: 70.1V, Element Configuration: Single, Max Breakdown Voltage: 53.6V, Max Forward Surge Current (Ifsm): 2.5A, and Max Repetitive Reverse Voltage (Vrrm): 250V. BZX55B8V2 is manufactured by Taiwan Semiconductor as part of their Uncategorized product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.

Specifications

Manufacturer
Taiwan Semiconductor
Category
Uncategorized

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Parameters

Clamping Voltage70.1V
Element ConfigurationSingle
Max Breakdown Voltage53.6V
Max Forward Surge Current (Ifsm)2.5A
Max Repetitive Reverse Voltage (Vrrm)250V
Max Reverse Leakage Current1uA
Min Breakdown Voltage48.5V
Peak Pulse Current21.4A
Peak Pulse Power1.5kW
Power Dissipation500mW
Reverse Recovery Time50ns
Reverse Standoff Voltage43.6V
RoHSCompliant
RoHS CompliantYes
Zener Voltage8.2V