1SS357
The 1SS357 is a general purpose rectifier diode from Toshiba with a maximum operating temperature of 125 degrees Celsius. It features a dual terminal position and a maximum reverse voltage of 85V. The diode has a power dissipation of 0.2W and is constructed from SILICON material. It is packaged in a R-PDSO-G2 package type.
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About 1SS357
The Toshiba 1SS357 Semiconductors datasheet provides detailed technical specifications, pinout information, and operating characteristics. This component: The 1SS357 is a general purpose rectifier diode from Toshiba with a maximum operating temperature of 125 degrees Celsius. It features a dual terminal position and a maximum reverse voltage of 85V. The diode has a power dissipation of 0.2W and is constructed from SILICON material. It is packaged in a R-PDSO-G2 package type.. Key parameters include Diode Element Material: SILICON, Diode Type: RECTIFIER DIODE, Eccn Code: EAR99, HTS Code: 8541.10.00.70, and Lead Free: No. 1SS357 is manufactured by Toshiba as part of their Semiconductors product line. On this page you can view and download the PDF datasheet, check specifications, and find similar components.
Specifications
- Manufacturer
- Toshiba
- Category
- Semiconductors
- File Size
- 271 KB
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Parameters
| Diode Element Material | SILICON |
| Diode Type | RECTIFIER DIODE |
| Eccn Code | EAR99 |
| HTS Code | 8541.10.00.70 |
| Lead Free | No |
| Max Operating Temperature | 125 |
| Military Spec | False |
| Number of Elements | 1 |
| Number of Terminals | 2 |
| Pin Count | 2 |
| Power Dissipation-Max | 0.2 |
| REACH | unknown |
| Rep Pk Reverse Voltage-Max | 85 |
| RoHS | No |
| Terminal Position | DUAL |
| TTI Americas | —1—View offer |